Method of forming an organic light-emitting display with black matrix

ABSTRACT

A method of forming an organic light-emitting display (OLED) includes the steps of providing a substrate, forming a black matrix on the substrate, forming a buffer layer on the black matrix, forming an active layer on the buffer layer, simultaneously patterning the black matrix and the buffer layer, and forming a display electrode and a thin film transistor over the buffer layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of forming an organiclight-emitting display, and more particularly, to a method of forming anorganic light-emitting display having a black matrix.

2. Description of the Related Art

With a rapid development of monitor types, novelty and colorful monitorswith high resolution, e.g., liquid crystal displays (LCDs), areindispensable components used in various electronic products such asmonitors for notebook computers, personal digital assistants (PDA),digital cameras, and projectors. The demand for the novelty and colorfulmonitors has increased tremendously.

Liquid crystal display (LCD) monitors control pixel luminance byadjusting voltage drop applied on a liquid crystal layer of the liquidcrystal display. Differing from liquid crystal displays (LCDs), OrganicLight Emitting Displays (OLEDs) determine the pixel luminance byadjusting forward bias current flowing through an LED. Withself-lighting technique without requiring additional light source, OLEDsprovide faster response time period than LCDs. In addition, OLEDs havethe advantages of better contrast and wider visual angle. Moreimportant, OLEDs are capable of being manufactured by existing TFT-LCDprocess. The commonly used OLEDs utilize a low-temperature polysiliconthin film transistor (LTPS TFT) substrate or amorphous silicon (a-Si)substrate.

Please refer to FIG. 1, which shows a structure of a thin filmtransistor applied in an organic light emitting displays (OLEDs)according to the prior art. In prior art, for forming an Organic LightEmitting Display (OLED) 100, a black matrix 101 with a predeterminedsize is formed on a glass substrate 102. Next, depositing a buffer layer104 and an amorphous thin film (not shown) over the black matrix 101 andthe glass substrate 102; the amorphous thin film is recrystallized as apoly crystalline thin film by using excimer laser annealing (ELA)process. Furthermore, etching the poly crystalline thin film to form apattern named as the semiconductor layer 106 is performed by using afirst photo-etching-process (PEP). Afterward, a gate insulator 108 isdeposited on the semiconductor layer 106 and the buffer layer 104.

Following this procedure, a gate metal 110 is formed using ametal-depositing process and a second PEP. Then, a source 103 and adrain 105 are formed by performing a Boron ion-implanting process forthe semiconductor layer 106 using the gate metal 110 as a self-alignmentmask. An inter-layer dielectric (ILD) 112 is deposited on the gate metal110 and the gate insulator 108, and a third PEP is performed to remove aportion of the ILD 112 and the gate insulator 108 on source 103 anddrain 105 to generate via holes 115. Next, performing a metal-depositingprocess and a fourth PEP to generate metal layers 114 (i.e. signal lineand drain metal) which covers the via holes 115 and connecting to thesource 103 and the drain 105. Then, a planarization layer 116 isdeposited on the metal layer 114 and the ILD 112. And a fifth PEP isperformed to remove a portion of the planarization layer 116 on themetal layer 114 connecting to the drain 105. After that, an Indium TinOxide (ITO) layer, serving as transparent electric conductivity film, isformed on the planarization layer 116. Then, a display electrode 118 isgenerated by using the sixth PEP. Finally, a light-emitting layer 120and a cathode metal layer 122 can be sequentially performed to completefabrication of the OLED 100.

In general, a pixel has a light-passing region 130 and anon-light-passing region 132 including the black matrix 101. The use ofthe black matrix 101 is to block light, thereby enhancing chromaticcontrast and facilitating photo efficiency of a polarizer.Traditionally, the black matrix 101 fabricated at the bottom of the OLED100, is a metal film having advantages of easy etching and welllight-blocking. As shown in FIG. 2, the positions of the black matrix101 relative to other layers of a thin film transistor before and aftera heating process according to the prior art. In LTPS processes,especially the recrystallization process, high temperature may make theglass substrate shrink, resulting in a misalignment of the black matrixpattern with the other layer of TFT patterns which are formed after theblack matrix. The use of a costly non-anneal glass is a resolution,however, cost of the whole OLED may rise as a result of using non-annealglass.

SUMMARY OF INVENTION

An objective of the present invention is to provide an organiclight-emitting display and a method for forming the organiclight-emitting display, to solve the problem existing in prior art.

Briefly summarized, the claimed invention is a method for forming anorganic light-emitting display (OLED). The method comprises the steps ofproviding a substrate, forming a black matrix on the substrate, forminga buffer layer on the black matrix, simultaneously patterning the blackmatrix and the buffer layer, and forming a thin film transistor and adisplay electrode over the buffer layer.

According to the claimed invention, a method for forming an organiclight-emitting display comprises the steps of providing a substrate,forming a black matrix on the substrate, forming a buffer layer on theblack matrix, forming a semiconductor layer on the buffer layer,simultaneously patterning the black matrix and the buffer layer, andforming a display electrode over the semiconductor layer.

According to the claimed invention, a method for forming an organiclight-emitting display comprises the steps of providing a substrate,forming a black matrix on the substrate, forming a buffer layer on theblack matrix, forming a gate metal over the black matrix, depositing agate oxide layer covering the gate metal and the buffer layer, forming asemiconductor layer on the gate oxide layer, and simultaneouslypatterning the gate oxide layer, the black matrix and the buffer layer.

According to the claimed invention, an organic light-emitting displaycomprises a substrate, a black matrix disposed on the substrate, abuffer layer covering the black matrix, a thin film transistor disposedon the buffer layer, a display electrode electrically connected to thethin film transistor, and a light-emitting diode disposed on the displayelectrode. The black matrix has a first pattern, and the buffer layerhas a second pattern substantially equal to the first pattern of theblack matrix.

These and other objectives of the present invention will become apparentto those of ordinary skilled in the art after reading the followingdetailed description of the preferred embodiment that is illustrated inthe various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a structure of a thin film transistor applied in an organiclight emitting displays according to the prior art.

FIG. 2 shows positions of the black matrix 101 relative to other layersof a thin film transistor before and after a heating process accordingto the prior art.

FIGS. 3-12 illustrate a first embodiment of forming an active matrixOLED according to the present invention.

FIGS. 13-22 illustrate a second embodiment of forming an active matrixOLED according to the present invention.

FIGS. 23-28 illustrate a third embodiment of forming an active matrixOLED according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

With reference to FIGS. 3-12, a first embodiment illustrating forming anactive matrix OLED (AMOLED) 200 according to the present invention. Asshown in FIG. 3, a black matrix 204 is formed on a glass substrate 202.Next, a buffer layer 206 is deposited on the black matrix 204, asillustrated in FIG. 4. An amorphous thin film (not shown) is depositedon the buffer layer 206, and the amorphous thin film is recrystallizedas a poly crystalline thin film by using excimer laser annealing (ELA)process. Then, etching the poly crystalline thin film to form a patternnamed as the semiconductor layer 208 is performed by using a firstphoto-etching-process (PEP) with a first mask. Afterward, as shown inFIG. 5, etching the black matrix 204 and the buffer layer 206 isperformed by using a second PEP with a second mask.

Then, a thin film transistor is formed over the buffer layer 206, as isdepicted in detailed below. As shown in FIG. 6, a gate insulator 210 isdeposited on the semiconductor layer 208 and the buffer layer 206.

Following this, performing a first metal-depositing process and a thirdPEP with a third mask forms a gate metal 211 on the gate oxide layer210, and then, a source 213 and a drain 215, as shown in FIG. 6, areformed by performing a Boron ion-implanting process for thesemiconductor layer 208 using the gate metal 211 as a self-alignmentmask.

As shown in FIG. 7, an inter-layer dielectric (ILD) 212 is deposited onthe gate metal 211 and the gate insulator 210. Then, a fourth PEP with afourth mask is performed to remove a portion of the ILD 212 and the gateinsulator 210 over the source 213 and the drain 215 to form a pluralityof via holes 217 on the source 213 and the drain 215.

Next, as shown in FIG. 8, performing a second metal-depositing processand a fifth PEP with a fifth mask to generate metal layers 218 (i.e.signal line and drain metal) which covers the via holes 217 andconnecting to the source 213 and the drain 215. Then, as shown in FIG.9, a planarization layer 220 is deposited on the metal layer 218 and theILD 212. And a sixth PEP with a sixth mask is performed to remove aportion of the planarization layer 220 on the metal layer 218 connectedto the drain 215 to generate an electrode hole 219.

After that, referring to FIG. 10, an Indium Tin Oxide (ITO) layer or anIndium Zinc Oxide (IZO) layer, serving as transparent electricconductivity film, is formed on the planarization layer 220. And adisplay electrode 222, connecting to metal layer 218 and the source 213,is formed by performing a sixth PEP with a sixth mask. Accordingly, thedisplay electrode 222 is electrically connected to the thin filmtransistor formed by the gate metal 211, the source 213 and the drain215 via the metal layer 218. Finally, with reference to FIGS. 11 and 12,a light-emitting layer 224 and a cathode metal layer 226 in respectiveorder formed on the display electrode 222 can be sequentially performedto complete fabrication of the OLED 200. When the OLED 200 operates,light can pass through a light-passing region 250 but is not liable topass through a non-light-passing region 252 as result of the blackmatrix 204 blocking the light.

With Reference to FIGS. 13-22, a second embodiment illustrating formingan active matrix OLED (AMOLED) 300 according to the present invention.As shown in FIG. 13, a black matrix 304 is formed on a glass substrate302. Then, a buffer layer 306 is deposited on the black matrix 304. Asshown in FIG. 14, an amorphous thin film (not shown) is deposited on thebuffer layer 306, and the amorphous thin film is recrystallized as apoly crystalline thin film by using excimer laser annealing (ELA)process. Then, etching the poly crystalline thin film to form a patternnamed as the semiconductor layer 308, is performed by using a firstphoto-etching-process (PEP) with a first mask.

Afterward, as shown in FIG. 15, a thin film transistor is formed overthe buffer layer 306, is depicted in details below. A gate insulator 310is deposited on the semiconductor layer 308 and the buffer layer 306.Following this, performing a first metal-depositing process and a secondPEP with a second mask forms a gate metal 311 on the gate oxide layer310, and then, a source 313 and a drain 315, as shown in FIG. 15, areformed by performing a Boron ion-implanting process for thesemiconductor layer 308 using the gate metal 311 as a self-alignmentmask.

As shown in FIG. 16, an inter-layer dielectric (ILD) 312 is deposited onthe gate metal 311 and the gate insulator 310. Then, a third PEP with athird mask is performed to remove a portion of the ILD 312 and the gateinsulator 310 over the source 313 and the drain 315 to form a pluralityof via holes 317 on the source 313 and the drain 315. Simultaneously, aportion of the ILD 312 and the gate insulator 310 over the buffer layer306 is also removed during the third PEP.

Next, as shown in FIG. 17, performing a second metal-depositing processand a fourth PEP with a fourth mask to generate metal layers 318 (i.e.signal line and drain metal) which covers the via holes 317 andconnecting to the source 313 and the drain 315. Then, referring to FIG.18, etching the black matrix 304 and the buffer layer 306 is performedby using a fifth PEP with a fifth mask, such that a portion of the blackmatrix 304 and the buffer layer 306, without being covered by the ILD312 and the gate insulator 310, is removed.

Afterward, as shown in FIG. 19, a planarization layer 320 is depositedon the metal layer 318, the ILD 312 and substrate 302. And a sixth PEPwith a sixth mask is performed to remove a portion of the planarizationlayer 320 on the metal layer 318 connected to the drain 315 to generatean electrode hole 319. After that, referring to FIG. 20, an Indium TinOxide (ITO) layer or an Indium Zinc Oxide (IZO) layer, serving astransparent electric conductivity film, is formed on the planarizationlayer 320. And a display electrode 322, which is connected to metallayer 318 and the source 313, is formed by performing a seventh PEP witha seventh mask. Accordingly, the display electrode 322 is electricallyconnected to the thin film transistor formed by the gate metal 311, thesource 313 and the drain 315 via the metal layer 318. Finally, withreference to FIGS. 21 and 22, a light-emitting layer 324 and a cathodemetal layer 326 in respective order formed on the display electrode 322can be sequentially performed to complete fabrication of the OLED 300.When the OLED 300 operates, light can pass through a light-passingregion 350 but is not liable to pass through a non-light-passing region352 as result of the black matrix 304 blocking the light.

Differing from the first embodiment of the method according to thepresent invention, the second embodiment of the present invention methodhas the step of patterning the black matrix performed subsequent to thestep of forming the metal layer 317 (as shown in FIG. 17). In thismanner, the light-passing region 250 of the OLED 200 of the firstembodiment comprises the ILD 212 and the gate oxide layer 210, but thelight-passing region 350 of the OLED 300 of the second embodiment doesnot have the ILD and the gate oxide layer.

In contrast to prior art, both the OLEDs of the first and secondembodiments utilize an identical mask in a lithography process. As aresult, in addition to CD loss resulting from etching processes, thebuffer layers 206, 306 have substantially the same area as the blackmatrixes 204, 304. In other words, the buffer regions 206 and 306 aredisposed above the non-light-passing regions 252 and 352, but no bufferregion is disposed above the light-passing regions 250 and 350, so thatwhen light passes the light-passing regions, no chromatic shift effectoccurs.

With Reference to FIGS. 23-28, a third embodiment illustrating formingan active matrix OLED (AMOLED) 400 according to the present invention.As shown in FIG. 23, a black matrix 404 is formed on a glass substrate402. Then, as shown in FIG. 24, a buffer layer 406 is deposited on theblack matrix 404.

Referring FIG. 24, a first metal-depositing process forms a first metalfilm on the buffer layer 406, and a first PEP with a first mask forms agate metal 411. Following this, referring to FIG. 25, a gate oxide layer410 is deposited on the gate metal 411 and the buffer layer 406. Then,an amorphous thin film (not shown) is deposited on the buffer layer 406,and the amorphous thin film is recrystallized as a poly crystalline thinfilm by using excimer laser annealing (ELA) process. Then, etching thepoly crystalline thin film to form a pattern named as the semiconductorlayer 408 is performed by using a second PEP with a second mask.Afterward, a source 413 and a drain 415 are formed by performing a Boronion-implanting process for the semiconductor layer 408.

As shown in FIG. 26, a third PEP with a third mask is performed toremove the black matrix 404 and the buffer layer 406. For the blackmatrix 404 and the buffer layer 406 are patterned with the same mask,the area of the black matrix 404 is identical as that of the bufferlayer 406.

Afterward, a planarization layer 420 is deposited on the metal layer418. And a fifth PEP with a fifth mask is performed to remove a portionof the planarization layer 420 on the metal layer 418 connected to thedrain 415 to generate an electrode hole 419.

After that, referring to FIG. 28, an Indium Tin Oxide (ITO) layer or anIndium Zinc Oxide (IZO) layer, serving as transparent electricconductivity film, is formed on the planarization layer 420. And adisplay electrode 422, which is connected to metal layer 418, is formedby performing a sixth PEP with a sixth mask. Accordingly, the displayelectrode 422 is electrically connected to the thin film transistorformed by the gate metal 411, the source 413 and the drain 415 via themetal layer 418. Finally, a light-emitting layer 424 and a cathode metallayer 426 in respective order formed on the display electrode 422 can besequentially performed to complete fabrication of the OLED 400. When theOLED 400 operates, light can pass through a light-passing region 450 butis not liable to pass through a non-light-passing region 452 as resultof the black matrix 404 blocking the light.

In sum, because the step patterning the black matrix is performed afterthe step of recrystallizing an amorphous thin film as a poly crystallinethin film, a misalignment of the pattern of the black matrix with theother layer patterns of TFT which are formed after the black matrix,resulting from high temperature making the glass substrate shrink, isavoided. In conclusion, without using a costly non-anneal glass, theOLED using the present invention can reduce cost. Besides, comparingwith the prior art, no buffer layer is disposed on the light-passingregion, chromatic shift is improved as light passes through it.

Although the present invention has been explained by the embodimentsshown in the drawings described above, it should be understood to theordinary skilled person in the art that the invention is not limited tothe embodiments, but rather various changes or modifications thereof arepossible without departing from the spirit of the invention.Accordingly, the scope of the invention shall be determined only by theappended claims and their equivalents.

1. A method for forming an organic light-emitting display (OLED),comprising: providing a substrate; forming a black matrix on thesubstrate; forming a buffer layer on the black matrix; patterning theblack matrix and the buffer layer simultaneously; and forming a thinfilm transistor and a display electrode over the buffer layer.
 2. Themethod of claim 1, wherein patterning the black matrix and the bufferlayer simultaneously is performed with an identical mask.
 3. The methodof claim 1, wherein the step of forming a thin film transistor and adisplay electrode over the buffer layer comprises: forming asemiconductor over the buffer layer; depositing a gate oxide layercovering the semiconductor layer and the buffer layer; forming a gatemetal on the gate oxide layer above the semiconductor layer;ion-implanting the semiconductor layer by using the gate metal as a maskto form a source and a drain in the semiconductor layer; depositing aninter-layer dielectric on the gate metal and the gate oxide layer;forming a plurality of via holes above the drain and source by etchingthe gate oxide layer and the inter-layer dielectric; forming a metallayer covering the plurality of via holes; forming a passivation layeron the metal layer and the inter-layer dielectric; forming the displayelectrode on the passivation layer; and forming a light-emitting diodeon the display electrode.
 4. The method of claim 3, wherein the step offorming the metal layer comprises: forming a first metal film on thesubstrate; and etching the first metal film to form a first metal layer.5. The method of claim 3, wherein the step of forming the semiconductorlayer further comprises: depositing an amorphous thin film on the bufferlayer; recrystallizing the amorphous thin film as a poly crystallinethin film; and etching the poly crystalline thin film to form thesemiconductor layer.
 6. The method of claim 3, wherein the step offorming the gate metal further comprises: forming a second metal thinfilm on the gate oxide layer; and forming the gate metal by etching thesecond metal thin film.
 7. The method of claim 3, wherein the step offorming the display electrode further comprises: forming an electrodehole on the metal layer by etching the passivation layer; forming atransparent electric conductivity film on the passivation layer and themetal layer; and forming the display electrode by etching thetransparent electric conductivity film.
 8. The method of claim 7,wherein the transparent electric conductivity film is selected from thegroup consisting of an Indium Tin Oxide (ITO) and an Indium Zinc Oxide(IZO).
 9. A method for forming an organic light-emitting display,comprising: providing a substrate; forming a black matrix on thesubstrate; forming a buffer layer on the black matrix; forming asemiconductor layer on the buffer layer; patterning the black matrix andthe buffer layer simultaneously; and forming a display electrode overthe semiconductor layer.
 10. The method of claim 9, whereinsimultaneously patterning the black matrix and the buffer layer isperformed with an identical mask.
 11. The method of claim 9, furthercomprising: depositing a gate oxide layer covering the semiconductorlayer and the buffer layer; forming a gate metal on the gate oxide layerabove the semiconductor layer; ion-implanting the semiconductor layer byusing the gate metal as a mask to form a source and a drain in thesemiconductor layer; depositing an inter-layer dielectric on the gatemetal and the gate oxide layer; forming a plurality of via holes abovethe drain and source by etching the gate oxide layer and the inter-layerdielectric; and forming a metal layer covering the plurality of viaholes.
 12. The method of claim 11, wherein the step of forming a displayelectrode over the semiconductor layer comprises: forming a passivationlayer on the metal layer and the inter-layer dielectric; and forming thedisplay electrode on the passivation layer.
 13. The method of claim 11,wherein the step of forming the metal layer further comprises: forming afirst metal film on the substrate; and etching the first metal film toform a first metal layer.
 14. The method of claim 11, wherein the stepof forming the semiconductor layer further comprises: depositing anamorphous thin film on the buffer layer; recrystallizing the amorphousthin film as a poly crystalline thin film; and etching the polycrystalline thin film to form the semiconductor layer.
 15. The method ofclaim 11, wherein the step of forming the gate metal further comprises:forming a second metal thin film on the gate oxide layer; and formingthe gate metal by etching the second metal thin film.
 16. The method ofclaim 11, wherein the step of forming the display electrode furthercomprises: forming an electrode hole on the metal layer by etching thepassivation layer; forming a transparent electric conductivity film onthe passivation layer and the metal layer; and forming the displayelectrode by etching the transparent electric conductivity film.
 17. Themethod of claim 16, wherein the transparent electric conductivity filmis selected from the group consisting of an Indium Tin Oxide (ITO) andan Indium Zinc Oxide (IZO).
 18. A method for forming an organiclight-emitting display, comprising: providing a substrate; forming ablack matrix on the substrate; forming a buffer layer on the blackmatrix; forming a gate metal over the black matrix; depositing a gateoxide layer covering the gate metal and the buffer layer; forming asemiconductor layer on the gate oxide layer; and patterning the gateoxide layer, the black matrix and the buffer layer simultaneously. 19.The method of claim 18, wherein patterning the gate oxide layer, theblack matrix, and the buffer layer simultaneously, is performed with anidentical mask.
 20. The method of claim 18, wherein the step of formingthe metal layer further comprises: forming a first metal film on thebuffer layer; and etching the first metal film to form the gate metal.21. The method of claim 18, further comprising: ion-implanting thesemiconductor layer to form a source and a drain in the semiconductorlayer; forming a metal layer on the semiconductor layer and the gateoxide layer; forming a planarization layer on the metal layer and thegate oxide layer; and forming the display electrode on the planarizationlayer.
 22. The method of claim 21, wherein the step of forming the metallayer further comprises: forming a second metal film on the substrate;and etching the second metal film to form the metal layer.
 23. Themethod of claim 21, wherein the display electrode further comprises:forming an electrode hole on the metal layer by etching the passivationlayer; forming a transparent electric conductivity film on thepassivation layer and the metal layer; and forming the display electrodeby etching the transparent electric conductivity film.
 24. The method ofclaim 23, wherein the transparent electric conductivity film is selectedfrom the group consisting of an Indium Tin Oxide (ITO) and an IndiumZinc Oxide (IZO).
 25. The method of claim 18, wherein the step offorming the semiconductor layer further comprises: depositing anamorphous thin film on the buffer layer; recrystallizing the amorphousthin film as a poly crystalline thin film; and etching the polycrystalline thin film to form the semiconductor layer.
 26. An organiclight-emitting display, comprising: a substrate; a black matrix disposedon the substrate having a first pattern; a buffer layer covering theblack matrix having a second pattern substantially equaling to the firstpattern of the black matrix; a thin film transistor disposed on thebuffer layer; a display electrode electrically connected to the thinfilm transistor; and a light-emitting diode disposed on the displayelectrode.
 27. The organic light-emitting diode of claim 26, wherein thethin film transistor comprises a semiconductor layer and a gate metal.28. The organic light-emitting diode of claim 26, wherein thetransparent electric conductivity film is selected from the groupconsisting of an Indium Tin Oxide (ITO) and an Indium Zinc Oxide (IZO).